unisonic technologies co., ltd 2sa1013 pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r208-049.d pnp epitaxial silicon transistor ? description the utc 2sa1013 is a pnp epitaxial silicon transistor, it uses utc?s advanced technology to provide the customers with high bv ceo and high dc current gain, etc. the utc 2sa1013 is suitable for power switching and color tv vertical deflection output, etc. ? features * high bv ceo * high dc current gain * large continuous collector current capability ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 - 2SA1013G-X-AB3-R sot-89 b c e tape reel 2sa1013l-x-t92-b 2sa1013g-x-t92-b to-92 e c b tape box 2sa1013l-x-t92-k 2sa1013g-x-t92-k to-92 e c b bulk 2sa1013l-x-t9n-b 2sa1013g-x-t9n-b to-92nl e c b tape box 2sa1013l-x-t9n-k 2sa1013g-x-t9n-k to-92nl e c b bulk note: pin assignment: b: base c: collector e: emitter ? marking sot-89 to-92 to-92nl utc 2sa1013 data code l: lead free g: halogen free
2sa1013 pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r208-049.d ? absolute maximum ratings (t a =25 ? c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -160 v emitter-base voltage v ebo -6 v collector current i c -1 a base current i b -0.5 a collector power dissipation sot-89 p c 500 w to-92/to-92nl 900 w junction temperature t j 150 c storage temperature t stg -55 ~150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 ? c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =-150v, i e =0 -1.0 a emitter cut-off current i ebo v eb =-6v, i c =0 -1.0 a collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -160 v dc current gain h fe v ce =-5v, i c =-200ma 60 320 collector-emitter sa turation voltage v ce(sat) i c =-500ma, i b =-50ma -1.5 v base-emitter voltage v be v ce =-5v, i c =-5ma -0.45 -0.75 v transition frequency f t v ce =-5v, i c =-200ma 15 50 mhz collector output capacitance c ob v cb =-10v, f=1mhz, i e =0 35 pf ? classification of h fe rank r o p range 60~120 100~200 160~320
2sa1013 pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r208-049.d ? typical characteristics collector current, -i c (a) collector current, -i c (ma) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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